I've not used JFETs before and was thinking about them first as high impedance current sources to get started learning more about them.
(I already gather that their potentially very high input impedance and low Ciss is a good thing and I'm broadly aware that FET and BJT input opamps divide their world into low bias current vs low offset voltage camps.)
Looking over a datasheet on one, I see a chart picturing Id vs Vgs (for one specific Idss) and illustrating several curves for different temperatures. I note in this case that they all cross at Id=10mA (and on this part, that happens in the selected world of this datasheet at Vgs=-0.4V.) That suggests that setting things up for Id=10mA would seem to mitigate temperature variation in a simple current source based on this device. (Similar on the real part, but not necessarily exactly there, of course.)
However, there is a complication. I'd like that current source to also be relatively _flat_ over the Vds compliance range as well as temperature. Looking over the Id vs Vds curves, it gets pretty nice and flat but close to the pinch-off Vgs(off) and not close to Id=10mA, where the d(Vds)/d(Id) slope is closer to about 3k ohms, compared to about 26k ohms at Id=1mA. So it seems to get the temperature stability tighter I have to loosen up on stability vs Vd, in this part.
Is that generally the case for simple JFET current sources? Am I reading this wrong? (If right, are there JFETs that get both of these benefits relatively well optimized at close to the same point of operation?)
Jon