SMPS using UC3842 - And related problems [hvis du overvejer xx3842 skal
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Citat: "... Mosfet heat is result of normaly two things,
1 on resistance of mosfet
insufficient drive volt. ..."
UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs:
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Differences Between the UCC3813 and UCC3800 PWM Families:
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Citat: "...The UCC3813 family is a lower-cost version of the UCC3800 family of industry standard PWM controllers..."
Andre varianter som er ringere end ucc380x-familien er: UCC38C43 MIC38HC43-1
Does a MOSFET need a gate resistor?:
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Citat: "... A gate resistor limits the instantaneous current that is drawn when the FET is turned on. If you are driving a FET directly from a low-current device (microcontroller or logic gate) then gate resistors are recommended. Anywhere from 5 to 100 ohms is fine. They also can be viewed as slew-rate limiting devices for the gate signal, or as devices to eliminate ringing at the gate.
If you are driving the FET from something like a dedicated half bridge driver or similar then they can be eliminated, the drivers are usually meant to be directly connected to the FET. ..."
Citat: "...The point is that many topologies can be more or less made to work for a given application! What is weird but true is that the boostbuck (Cuk) converter works better than all the rest!..."
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kommercielt).
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ANALYSIS OF SNUBBING METHODS FOR ISOLATED CUK CONVERTER USED IN ...
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Dr. Slobodan Cuk Power Electronics Group, California Institute of Technology
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Feb 1, 2008 Bridgeless PFC Boosts Low-Line Efficiency
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Dr. Slobodan Cuk:
Del 1: Jul 1, 2010, True Bridgeless PFC Converter Achieves Over 98% Efficiency,
0.999 Power Factor:
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Del 2: Aug 1, 2010, True Bridgeless PFC Converter Achieves Over 98% Efficiency,
0.999 Power Factor: Part 2:
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VIP - med diagram: Del 3: Oct 1, 2010, Single-Stage Isolated Bridgeless PFC Converter Achieves Over 98% Efficiency, 0.999 Power Factor:
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Application Characteristics of an Experimental RB-IGBT (Reverse Blocking IGBT) Module:
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A High Efficiency Indirect Matrix Converter Utilizing RB-IGBTs:
Citat: "... These devices are N-channel Power MOSFETs developed using a new generation of MDmeshTM technology: MDmesh II PlusTM low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. ...
Crss 2,2pF ..."
Jeg fandt fx:
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PS: Det var ikke den billigste, men det var fra et firma jeg kendte.
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Den "billigste" var:
AOTF29S50L:
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En anden:
STF31N65M5:
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Dioder
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in stock
packaging (alt andet end reel) fx: bulk Cut tape tray tube
Voltage fx
600-1200V
Current fx
5-10A
66 fund
sorter efter pris (unit price)
PS: Du ved hvis du har sorteret forkert, da den dyreste koster ca.
4000kr :-)
Den billigste koster:
13kr Silicon Carbide Schottky
1200V (1.2kV)
5.9A No Recovery Time > 500mA (Io) [!] Reverse Recovery Time (trr) 0ns
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Datablad:
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Citat: "... Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway ..."
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SiC MOSFETs (SiCFET):
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(lidt falske med)
Der er 16 fund.
Et lille stykke nede er der en med 156mOhm og 650V:
Sep 1, 2007 Reduce Circuit Zapping From Cosmic Radiation:
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Citat: "... About 90% of high-energy particles at ground level are neutrons. ... For example, the wide bandgap of silicon carbide makes it much more radiation hardened than conventional silicon. Diodes are also less susceptible to SEB than MOSFETs and IGBTs, but they are still susceptible. ... Like semiconductor technology, the applied voltage stress has a significant effect on the SEB failure rate. Increasing the applied voltage greatly increases the probability of SEB failures. Conversely, decreasing the applied voltage greatly increases reliability, as will be shown. ..."
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Omtale:
Jun. 19, 2013, SiC MOSFETs Enable Next-Generation Solar Inverters
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High-Temperature 1200 V/10 A SiC MOSFET
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Jul. 3, 2013, eGaN FET ? Silicon Power Shoot Out: A Retrospective When a new technology is introduced, it is not reasonable to think that engineers will intuitively know how to effectively and efficiently take advantage of the performance enhancements that the new technology offers ? there is always a learning curve. This is being borne out in the case of the rapidly emerging technology of high performance gallium nitride transistors.
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May 1, 2007 A New Way to Model Current-Mode Control
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"... This article aims to demystify current-mode control, and cut through the myths and misconceptions of its operation. ..." Jun 1, 2007 A New Way to Model Current-Mode Control
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Aug 1, 2007 Stacked-Ceramic Caps Brave High Temperatures
Citat: "... SiC also offers a substantially reduced on-resistance variation over its
range of 20%, compared with 200% to 300% for Si. The SiC MOSFET die is
plastic package. ..."
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25 August, 2004, BBC News: Door open for silicon replacement:
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Citat: "... Previous research has already shown that even at red-hot temperatures as high as 650C (1,202F), silicon carbide devices can function unperturbed and without the need for cooling. ... One exciting application for silicon carbide could be in deep-space missions, where nuclear power would be needed for the craft. Radiation-hardened silicon carbide devices would reduce the shielding needed to protect reactor control electronics ..."
Oct 28, 2011, powerelectronics.com: SiC ?Super? Junction Transistors Deliver High Temp Performance:
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