wirebond inductance

Am 12.05.21 um 17:32 schrieb snipped-for-privacy@highlandsniptechnology.com:

The Infineon BFP640 model has the sot-343 parasitics and tose of the bonding / chip.

• Infineon Technologies AG GUMMEL-POON Transistor MODEL IN SPICE 2G6 SYNTAX
• BFP640 Model in SOT343 Incuding 1/f Noise Model and Temperature Model June 2002

• For DC-simulations, the parameter set is valid in the temperature range from T = -25 °C upto T = 125 °C.
• The AC-behaviour is correctly simulated only at T = 25 °C. In order to simulate S-Parameters at T = -25 °C resp.
• T = 125 °C, the parameter ITF of the main transistor must be modified by the following equation:

• ITF(T) = ITF(To) * ( 1 - 6.5e-3 * (T-To) + 1.0e-5 * (T-To)^2 )
• To = 25 °C

• This means:
• -------------------------------
• ITF(-25 °C) = 1.35 * ITF(25 °C)
• ITF(125 °C) = 0.45 * ITF(25 °C)

• If in Parameter Set available set:
• TITF1 = -6.5e-3
• TITF2 = 1.0e-5

• BFP640

• BFP640 C B E .SUBCKT BFP640 1 2 3 X1 22 11 33 2 1 3 SOT343_BFP640 X2 11 22 33 CHIP_BFP640 .ENDS BFP640

• Chip parasitics BFP640

• CHIP_BFP640 C B E .SUBCKT CHIP_BFP640 1 2 3 Q1 10 20 30 4 M_BFP640 CBEC 20 30 9.840E-14 CBCC 20 10 5.593E-14 LBC 2 20 1.200E-10 LCC 1 10 1.200E-10 LEC 3 30 2.000E-11 CES 3 33 1.800E-13 CBS 2 22 7.900E-14 CCS 1 11 7.500E-14 RBS 4 22 1.200E+03 RCS 4 11 1.200E+03 RES 4 33 3.000E+02 .ENDS CHIP_BFP640

• Package Model SOT343 for BFP640

• SOT343_BFP640 Bi Ci Ei Bo Co Eo .SUBCKT SOT343_BFP640 1 2 3 10 20 30 LBB 1 10 0.6962E-9 LCB 2 20 0.6824E-9 LEB 3 30 0.2306E-9 CCEO 20 30 131.2E-15 CBEO 30 10 102.5E-15 CCEI 2 3 112.6E-15 CBEI 3 1 180.4E-15 .ENDS SOT343_BFP640

• BJT Model SOT343 for BFP640
• .MODEL M_BFP640 NPN(
• IS = 2.200E-16
• NF = 1.025E+00
• BF = 4.500E+02
• NE = 2.000E+00
• ISE = 2.100E-14
• NR = 1.000E+00
• BR = 5.500E+01
• NC = 1.800E+00
• ISC = 4.000E-13
• VAF = 1.000E+03
• VAR = 2.000E+00
• IKF = 1.500E-01
• IKR = 3.800E-03
• RB = 3.129E+00
• RBM = 2.707E+00
• IRB = 1.522E-03
• RE = 6.000E-01
• RC = 3.061E+00
• XTB =-1.420E+00
• EG = 1.078E+00
• XTI = 3.000E+00
• TF = 1.800E-12
• VTF = 1.500E+00
• XTF = 1.000E+01
• ITF = 4.000E-01
• CJE = 2.276E-13
• VJE = 8.000E-01
• MJE = 3.000E-01
• CJC = 6.743E-14
• VJC = 6.000E-01
• MJC = 5.000E-01
• XCJC = 1.000E+00
• CJS = 9.335E-14
• VJS = 6.000E-01
• MJS = 2.700E-01
• FC = 8.000E-01
• TR = 2.000E-10
• PTF = 0.000E+00
• AF = 2.000E+00
• KF = 7.291E-11
• TNOM = 25)

Gerhard

Thanks. If I really have around 700 pH drain inductance, some of our ideas won't work. I'll TDR it and see.