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wirebond inductance

Any estimate of the wirebond inductance of a SOT-343 (SC-70) part? I'm simulating a little pulse generator that uses a SAV-541 and want to include the drain pin inductance. Later today I might try to measure it.

I'm simulating making 45 ps wide impulses, but that's probably not real without including all the parasitics. This is to generate a variable-amplitude fiducial pulse in an optical systems, using an e/o modulator.

Reply to
jlarkin
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Am 12.05.21 um 17:32 schrieb snipped-for-privacy@highlandsniptechnology.com:

The Infineon BFP640 model has the sot-343 parasitics and tose of the bonding / chip.

***************************************************************
  • Infineon Technologies AG GUMMEL-POON Transistor MODEL IN SPICE 2G6 SYNTAX
  • BFP640 Model in SOT343 Incuding 1/f Noise Model and Temperature Model June 2002
***************************************************************
  • For DC-simulations, the parameter set is valid in the temperature range from T = -25 °C upto T = 125 °C.
  • The AC-behaviour is correctly simulated only at T = 25 °C. In order to simulate S-Parameters at T = -25 °C resp.
  • T = 125 °C, the parameter ITF of the main transistor must be modified by the following equation:
*
  • ITF(T) = ITF(To) * ( 1 - 6.5e-3 * (T-To) + 1.0e-5 * (T-To)^2 )
  • To = 25 °C
*
  • This means:
  • -------------------------------
  • ITF(-25 °C) = 1.35 * ITF(25 °C)
  • ITF(125 °C) = 0.45 * ITF(25 °C)
*
  • If in Parameter Set available set:
  • TITF1 = -6.5e-3
  • TITF2 = 1.0e-5
**************************************************************
  • BFP640
* *.OPTION TNOM = 25, GMIN = 1.0E-12 *
  • BFP640 C B E .SUBCKT BFP640 1 2 3 X1 22 11 33 2 1 3 SOT343_BFP640 X2 11 22 33 CHIP_BFP640 .ENDS BFP640
**************************************************************
  • Chip parasitics BFP640
*
  • CHIP_BFP640 C B E .SUBCKT CHIP_BFP640 1 2 3 Q1 10 20 30 4 M_BFP640 CBEC 20 30 9.840E-14 CBCC 20 10 5.593E-14 LBC 2 20 1.200E-10 LCC 1 10 1.200E-10 LEC 3 30 2.000E-11 CES 3 33 1.800E-13 CBS 2 22 7.900E-14 CCS 1 11 7.500E-14 RBS 4 22 1.200E+03 RCS 4 11 1.200E+03 RES 4 33 3.000E+02 .ENDS CHIP_BFP640
**************************************************************
  • Package Model SOT343 for BFP640
*
  • SOT343_BFP640 Bi Ci Ei Bo Co Eo .SUBCKT SOT343_BFP640 1 2 3 10 20 30 LBB 1 10 0.6962E-9 LCB 2 20 0.6824E-9 LEB 3 30 0.2306E-9 CCEO 20 30 131.2E-15 CBEO 30 10 102.5E-15 CCEI 2 3 112.6E-15 CBEI 3 1 180.4E-15 .ENDS SOT343_BFP640
**************************************************************
  • BJT Model SOT343 for BFP640
  • .MODEL M_BFP640 NPN(
  • IS = 2.200E-16
  • NF = 1.025E+00
  • BF = 4.500E+02
  • NE = 2.000E+00
  • ISE = 2.100E-14
  • NR = 1.000E+00
  • BR = 5.500E+01
  • NC = 1.800E+00
  • ISC = 4.000E-13
  • VAF = 1.000E+03
  • VAR = 2.000E+00
  • IKF = 1.500E-01
  • IKR = 3.800E-03
  • RB = 3.129E+00
  • RBM = 2.707E+00
  • IRB = 1.522E-03
  • RE = 6.000E-01
  • RC = 3.061E+00
  • XTB =-1.420E+00
  • EG = 1.078E+00
  • XTI = 3.000E+00
  • TF = 1.800E-12
  • VTF = 1.500E+00
  • XTF = 1.000E+01
  • ITF = 4.000E-01
  • CJE = 2.276E-13
  • VJE = 8.000E-01
  • MJE = 3.000E-01
  • CJC = 6.743E-14
  • VJC = 6.000E-01
  • MJC = 5.000E-01
  • XCJC = 1.000E+00
  • CJS = 9.335E-14
  • VJS = 6.000E-01
  • MJS = 2.700E-01
  • FC = 8.000E-01
  • TR = 2.000E-10
  • PTF = 0.000E+00
  • AF = 2.000E+00
  • KF = 7.291E-11
  • TNOM = 25)

Gerhard

Reply to
Gerhard Hoffmann

Thanks. If I really have around 700 pH drain inductance, some of our ideas won't work. I'll TDR it and see.

Reply to
John Larkin

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