The Other Power Transistor Aiming to Dominate the Age of SiC
>formatting linkExplore the integration of silicon-carbide (SiC) technology and advanced circuit design to enhance the overall density and efficiency of power converters.
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I used a Cree SiC fet, in my Pockels Cell driver. As a high-voltage switch, the figure of merit Rdson * Cout was many times better than I could get with any silicon mosfets. The circuit wouldn't have worked with silicon.
But driving the gate was a real nuisance. I went from -5 to +18 in a couple of nanoseconds, which took a special GaN driver circuit on its own baby board,
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The glob-top is mostly to protect the absurdly fragile EPC GaN fets, and give them a bit of extra cooling. Finding the right glob stuff was a project of its own.There are beginning to be some specific SiC gate drivers, but the market seems to be power conversion, so the drivers are fairly slow and have gigantic prop delays.
I note that EPC said that they would never sell packaged parts, but now they do.