I'm using an IRF540 MOSFET plus a chunky electromechanical slide switch and am encountering some problems. I have 12V connected to one contact of the switch, that when it is switched on, connects the 12V to the drain of the FET. The source of the FET is connected to ground. The gate is off (low) when the electromechanical switch is flipped on. I believe the FET is getting damaged by a high transient voltage on the drain when the e-m switch is flipped.
The VDSS (max drain-source voltage) is 100V. This seems pretty high for such a transient, but in another circuit configuration (where the e-m switch was controlling the gate of the FET, without a series resistor) it was even more reliably and thoroughly destroying the FET, presumably by exceeding the even lower VGS (max gate-source voltage) of 20V. This was fixed by adding a
1k series resistor between the switch and gate. In the current configuration, the series resistance of the load (between the 12V from the switch, and the drain of the FET) is only a few ohms.I have tried to view the switch-on transient on a scope, but it seems to be faster than the resolution of my scope.
For a solution, I'm thinking of putting a small general-purpose diode across the e-m switch -- basically with the anode connected to the drain of the FET, and the cathode connected to the 12V on the other side of the switch -- so that when the e-m switch closes, any resulting spike on the drain would be clamped and conducted back to the 12V supply rail.
Does anyone have any other thoughts on what is happening, or if this is a good or bad solution for any reason? I'm also not sure how to size the diode -- maybe 50 or 100 mA?
Thanks for any help...