It's a TI GaNfet lowside gate driver. Insane specs.
It's a nasty little leadless package. There's an even faster BGA version.
I wish there was a higher-voltage version, for driving SiC parts.
It's a TI GaNfet lowside gate driver. Insane specs.
It's a nasty little leadless package. There's an even faster BGA version.
I wish there was a higher-voltage version, for driving SiC parts.
Yikes, nine bucks in onesies.
Pretty cool driving 5V into 220 pF in 650 ps, for sure.
Cheers
Phil Hobbs
That's in the noise floor for the products that we have in mind. But it will cost a lot more than the fets we will be driving.
What's interesting is that the schematic on the data sheet seems to show a p-channel GaN fet... on chip!
You can’t make good PFETs in III-V systems, alas, because the hole mobility is very low even compared with silicon.
Cheers
Phil Hobbs
I took that to be a regular silicon p-ch fet. Although the chip is intended to drive GaN devices isn’t it itself regular silicon- does the datasheet say it is fabricated from GaN?
But the performance is amazing, if it is silicon.
My alternative GaN gate driver would be a *lot* of Tiny Logic gate sections in parallel. Som of those are about as fast.
We are also considering using a BUF602, 1 GHz bandwidth and 350 mA out, but it would need weird positive and negative supplies.
We'll try all the above.
I really want a fast SiC gate driver too. That would need close to 20 volts swing. Most SiC drivers are isolated (which we don't need) and have huge prop delays, and probably correspondingly high jitter.
My summer interns are playing with fast high voltage switchers on the theory that a product might emerge somehow.
I does sound like people are putting several semi types on one chip.
In one package, anyway.
Cheers
Phil Hobbs
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