Does anyone know how to calculate the junction resistance for a n-Si Schottky diode from the fundamental properties. I know the effective depletion width, the junction area, the doped resistance, and of course the intrinsic resistance of silicon. Obviously I cannot use the doped resistance because the depletion region is just that, depleted. Yet it doesn't seem correct to use the intrinsic resistance because it's doped silicon, no? Any ideas?

I appreciate any help, Paul