After some search on this group, at the internet and at Xilinx web site I have not found a conclusive set of informations regarding the behavior of a Spartan-3's input pin in a high voltage signaling. The circuit would use a 27Kohm series resistor to sense the presence of a 24V signal. It is a very slow signal and the series limiting resistor would use the ESD clamp diodes to keep the input voltage below the gate oxide limits. The 27K values was chosen to have the zero state input with maximum leakage current for this device (25uA). I understand the 10mA limit on the clamp diodes (100mA max for this device) would not be stressed with the near 1mA current flow but I wonder if this situation could somehow reduce the part's MTBF and in which amount. I'd like to avoid using an external diode to VCCO (or a zener also because it's knee) since any other part in the system will reduce the overall MTBF. In case it is important there will be 56 inputs in this condition in a TQ144 package.
Using the help of this group I would like to include here another question: many documents at Xilinx says the clamp diodes are not present when the pin is configured as outputs. Is the electronic structure of these pins with such level of complexity that can avoid the parasitic diodes (a natural feature for a CMOS architecture)? The XAPP429 and device's data sheet also suggest the input pin structure for CoolRunner-II devices doesn't have clamp diode to VCCO. How can it deal with ESD without the diode to VCCO?
Thanks in advance for your help in this matter.
-Augusto