I'm converting a NIOS design to a NIOS 2 design. The end product has a large number of 256MBit FLASH devices (19). I've mapped all the periferrals to low mamory 0x000 to 0x2000 and then one 256 MBit SDRAM
0x0200 0000 (spaces added for clarity) I then start adding FLASH devices at 0x0400 0000. All goes well till I try to place FLASH at 0x1000 0000. I get a compiler error messages: "Address range of instruction master crossing a 256 MByte boundary. Not supported"My questions are: Did I do something wrong? Is this a bug or for real? How can I handle large memory designs? How can I make some of the FLASH data and ont instructin memory and will that help?
Thanks George