Hi all, I have some basic doubts. The initialization sequence for sdram's from different chip manufacturers vary slightly although the ones that I have referred to(micron, samsung, hynix) use "precharge followed by 2 auto-refresh cycles". how does this wake up the device? Also does the 2 cycles here mean two complete refreshes of 4096 rows?
My understanding is this. Once I power-up and initialize using burst type auto-refresh, my device is in idle state and because I write/read every row and column more than twice within 64ms, i dont need any refresh. Although from post-place and route simulation results I can verify that the logic and timing for memory controller is ok, the pattern still looks very strange(on the monitor after configuration with the bit fle). It looked to me like once every few rows, a wrong row is opened. The only thing that changed this strange pattern was the auto-refresh counter in the initialization sequence
Auto-refresh specified can be implemented either as a burst of 4096 cycles every 64ms or can be distributed every 15.625 us right? so while initializing the device if I use burst type command then after 2 complete cycles the device should be in idle state. Does the internal refresh counter stop working now? and if I dont issue any refresh then it cannot carry on any kind of refresh operation now can it?
Any help is greatly appreciated. Thanks Subhasri.K