Dear experts, In our current consumer electronics product in our company we are using NVRAM to store some information related to language settings,tuning info and other stuff like that.Recently we have been experiencing lot of corruption in NVRAM.And the symptoms caused by curroption seem to go when we do full NVRAM erase. I understood that there are 2 ways of writing data to nvram.One is page mode and other is by byte mode.
1)Currently we are using page mode for writing bytes.I have following queries regarding this:While writing data to a particular page suppose the data getting written crossess the page boundary is it mandatory to make sure data gets wrapped around to start of page?We are doubting that while writing data which crosses boundaries it wraps around and so the data in start of page gets corrupted.
2)What are the advantages and disadvantages of going between page mode and byte mode of writing?3)My customer claims that its beneficial to go for byte mode and the theory he gives in support of this is,suppose we are writing to a page of NVRAM and in between the power goes the entire page gets corrupted where as when you do byte writes only the current address location containing the data being written gets corrupted.Is this true?We are currently using page mode and hes suggesting to move to byte mode.I am not convinced at his argument.Can some one throw light on this?
4)What will happen to the nvram data in the following situation: While data is getting written to NVRAM suppose power failure happens,will the data in nvram get corrupted?If so how to avoid such failures from happening?5)Worst thing here is we are not able to reproduce the corruption and our customer keeps getting complaints from service guys regarding more products getting returned due to nvram corruption.What will be the strategy to work on this issue further?
Looking farward for all your replys and advanced thanks for the same,
Regards, s.subbarayan