Hallo NG, ich nutze LTspice noch nicht sehr lange und bin nun auf ein Problem bei der Verwendung eines IGBT Modells der Fa. Infineon gesto=DFen.
Das Modell bzw. die Bibliothek lautet wie folgt:
*****************************************************************- Level2 Version of 600V HS-IGBT/EMCON HEDIODE Models feb 2002 *
- INFINEON TECHNOLOGIES AG duo_p_n60HS_L2.LIB *
- (V1.0a) 02/02 *
- *
- Models provided by INFINEON are not warranted by INFINEON as *
- fully representing all of the specifications and operating *
- characteristics of the semiconductor product to which the *
- model relates. The model describe the characteristics of a *
- typical device. *
- In all cases, the current data sheet information for a given *
- device is the final design guideline and the only actual *
- performance specification. *
- Altough models can be a useful tool in evaluating device *
- performance, they cannot model exact device performance under *
- all conditions, nor are they intended to replace bread- *
- boarding for final verification. INFINEON therefore does not *
- assume any liability arising from their use. *
- INFINEON reserves the right to change models without prior *
- notice. *
- *
- This library contains Level 2 models for the following *
- INFINEON Technologies 600 V HS_IGBT/EMCON HE Power Diodes *
- devices/chip-models including lead inductances related *
- Model for 600 V HS-IGBT/EMCON-FAST DuoPacks *
- devices/chip-models including lead inductances related to *
- packages: *
- SKW20N60HS *
- SKW30N60HS *
- *
- the model is based on the publication: *
- *
- R.Kraus, P.T=FCrkes, J.Sigg *
- Physics-based Models Of Power Semiconductor Devices *
- For The Circuit Simulator Spice *
- *
- Power Electronics Specialists Conference, 1998. *
- PESC 98 Record. 29th Annual IEEE *
- SUPPORTemail: snipped-for-privacy@infineon.com *
- physical parameters: Nd =3D 1.2e14 .PARAM
- {LIMIT(TANH(1e3*I(VDE))*(((ISE(TJ)**((t0 + TJ)/(t0 +
- * ABS(I(VDE))**((t0 + 27)/(t0 + TJ)) - ABS(I(VDE))),-1e6,1e6)} GD0 ano mi1 VALUE =3D
- {LIMIT(TANH(1e3*I(VD0))*(((ISM(TJ)**((t0 + TJ)/(t0 +
- * ABS(I(VD0))**((t0 + 27)/(t0 + TJ)) - ABS(I(VD0))),-1e6,1e6)} VDE ano ano1 0 DE ano1 mi D1 D0 ano2 mi1 D2 VD0 ano ano2 0 .model D1 D (is=3D{Ise0}, N=3D {N_ideal}) .model D2 D (is=3D{Ism0}, N=3D2) VID0 mi1 mi 0 VITOT kat kathv 0 EVDIFF kathv kath VALUE =3D {(TJ + t0)* Vdiff} EGIR mi kat VALUE =3D {I(VITOT)*Rd(V(q,0),TJ)} GID ano mi VALUE =3D {IQ(V(xj,0),I(VID0),V(q,0),I(VDXJ),TJ) - I(VIJCT)} RGID mi 0 100meg CQB q 0 1u RHELP q 0 1meg GRQB q 0 VALUE =3D {1u*V(q,0)/(Tau*((TJ + t0)/300)**2) } GIQ 0 q VALUE =3D {MAX(I(VID0),0) + IQ(V(xj,0),I(VID0),V(q,0),I(VDXJ),TJ)} EXJ xj1 0 VALUE {MAX(xj(V(ano,mi),I(VITOT),V(xj1,0)),1e-4) } CXJ xj 0 1n VDXJ xj1 xj 0 EJUNCT jct 0 VALUE =3D {LIMIT(V(kat,ano),0,VPT)} VIJCT jct cp 0 DJCT 0 cp DXXX .MODEL DXXX D (is =3D 1p, CJO=3D {CJ0}) .FUNC EG(T) {1.16 - 7.02e-4*(T + t0)**2/(T + t0 + 1108)} .FUNC DA(T) {2*kb*un*up/q/(un + up)*(T + t0)*(((T + t0)/300)**-1.5)} .FUNC ISE(T) {(T + t0)*un*(((T + t0)/300)**-1.5)*((ise_g*(ni0*((T
- t0)/300)**1.5*exp(1/(2*8.61e-5)
- *(-300*EG(T)+(t0 + T)*EG(27))/(T + t0)/300)))
- t0)/300)**1.5*exp(1/(2*8.61e-5)
- t0)/300)**1.5*exp(1/(2*8.61e-5)
- *sqrt(DA(T)/(Tau*((T + t0)/300)**2))} .FUNC xj(V,Y2,X) {0.5*((XF*XF*((1-limit(V,-VPT,0)))/(Nd+MAX(up*(-Y2)/(un+up),0)/A/q/(vlimit)= ))/MAX(X,.1m)
- MAX(X,.1m))} .FUNC w(V) {MAX((w0-V)*(1 + a1),1e-4)} .FUNC Rd(Z,T) {w0*w0/(un*QN*(((T + t0)/300)**-1.5) + (un + up)*MAX(Z,1m*QN)*1e-6*(((T + t0)/300)**-1.5))} .FUNC Td(V,U,T) {a2*w(V)*w(V)/DA(T)/(1 + w(V)*1e9*LIMIT(U,0,1)/4/DA(T))} .FUNC IQ(V,Y,Z,U,T) {((Tau*((T + t0)/300)**2)*Y - MAX(Z,1m*QN)*1e-6)/(Td(V,U,T))}
- end of functions .ends .SUBCKT L7xxxU_L2 ano gate kat PARAMS: TJ =3D 27 A_total =3D
- {LIMIT(TANH(1e3*I(VDE))*(((ISE2(TJ)**((t0 + TJ)/(t0 +
- * ABS(I(VDE))**((t0 + 27)/(t0 + TJ)) - ABS(I(VDE))),-1e6,1e6)} VDE ano anx 0 DE anx e1 D1 DS kat d1 D2 .MODEL MOS NMOS (LEVEL=3D3,nsub=3D{Nsource},tox=3D{tox/100},vmax=3D{vlimit},uo=3D{u_surf},C= GSO=3D1p,CGDO=3D1p) .MODEL D1 D (IS=3D{Ise_x},N =3D1.1) .MODEL D2 D (IS=3D{Ise_k},CJO=3D{CJS},BV=3D {2*BV_FW}) ETHERM g_t g VALUE =3D {DVt(TJ)} RG gate g_t {Rg*(((TJ + t0)/300)**1.5)} RS s kat {Rs} EVGCOX vgcox 0 VALUE { V(ox,kat)-{vsw} } RVGC vgcox 0 100meg GICOX g ox VALUE =3D {LIMIT((Cox/100 +
- - sqrt(2*eps0*epsi*q*Nsource*psi2(27)))/eps0/eox} .FUNC DA(T) {2*k*un*up/q/(un + up)*(T + t0)*(((T + t0)/300)**-1.5)} .FUNC LA(T) {sqrt(DA(T) * Taub*((T+t0)/300)**2) } .FUNC ISE2(T) {LIMIT(1e20*ise_g*k*(T
- + Td(V,X,T)*3*MAX(ISE2(T),islimit)*Qbd(Y,Z,V,X,T)/QS0(V,T)/QS0(V,T))),0,1e6)} .FUNC INE(Y,Z,V,X,T) {LIMIT(0.75*MAX(ISE2(T),islimit)*(Qb0(Y,Z,V,X,T)/QS0(V= ,T))*(Qb0(Y,Z,V,X,T)/QS0(V,T)),0,1e6)} .FUNC IPC(Y,Z,V,X,T) {LIMIT((1/3)*Y+(4/3)*(Qb0(Y,Z,V,X,T)/F1(V,T)
Ich verwende zur Zeit das Modell des SKW20N60HS. Es handelt sich hierbei um einen IGBT mit eingebauter Freilaufdiode. Insofern werden durch das Modell eigentlich zwei Bauteile beschrieben. Wenn ich diese Bibliothek in LTspice einbinde, bekomme ich am Ende der Simulation die folgende Fehlermeldung:
Circuit: * E:\Projekte\DDx00\doc\igbt2.asc
Error on line 162 : m:u1:igbt:fet u1:igbt:d u1:igbt:g u1:igbt:s u1:igbt:s u1:igbt:mos w=3D 0.87803144 ,l=3D 2.5e-006 , ic=3Doff No such parameter on this device Early termination of direct N-R iteration. Direct Newton iteration failed to find .op point. (Use ".option noopiter" to skip.) Starting Gmin stepping Gmin =3D 10 vernier =3D 0.5 vernier =3D 0.25 Gmin =3D 3.62829 vernier =3D 0.125 vernier =3D 0.0625 vernier =3D 0.03125 vernier =3D 0.015625 vernier =3D 0.0078125 vernier =3D 0.00390625 vernier =3D 0.00195313 vernier =3D 0.000976563 Gmin =3D 3.73824 vernier =3D 0.000488281 vernier =3D 0.000244141 vernier =3D 0.00012207 vernier =3D 6.10352e-005 vernier =3D 3.05176e-005 vernier =3D 1.52588e-005 vernier =3D 7.62939e-006 vernier =3D 3.8147e-006 vernier =3D 1.90735e-006 vernier =3D 9.53674e-007 Gmin =3D 3.73824 vernier =3D 4.76837e-007 vernier =3D 2.38419e-007 vernier =3D 1.19209e-007 vernier =3D 5.96046e-008 vernier =3D 2.98023e-008 vernier =3D 1.49012e-008 vernier =3D 7.45058e-009 vernier =3D 3.72529e-009 vernier =3D 1.86265e-009 vernier =3D 9.31323e-010 Gmin =3D 3.73824 vernier =3D 4.65661e-010 vernier =3D 2.32831e-010 vernier =3D 1.16415e-010 vernier =3D 5.82077e-011 vernier =3D 2.91038e-011
Die Fehlermeldung erscheint erst am Ende des Simulationsdurchlaufes, wobei die Ergebnisse eigentlich plausibel sind und sich mit physikalisch durchgef=FChrten Messungen decken .
Hat jemand schon einmal ein solches Problem gehabt und wei=DF, wie man es abstellt ? Bezieht sich die Angabe der Zeile in der Fehlermeldung auf das Modell ?
In den Modell taucht ein Parameter TJ (Chiptemperatur ?) auf. Kann man hier m=F6glicherweise das Verhalten des IGBT auch bei verschiedenen Chiptemperaturen simulieren.
Falls hier jemand Rat wei=DF, w=E4re ich f=FCr einen Hinweis sehr dankbar.
Vielen Dank
Ralf Bartling