In this MOSFET, when we apply a +ve voltage to the Gate, we repel holes as the majority charge carrier in the p-type substrate downwards, thus uncovering fixed acceptor ions/atoms which are now negativly charged (electrons in the substrate are drawn to this region under the Gate).
We thus create a layer of fixed negative ions (a acceptor atom with a electron) and Sedra calls this newly formed structure a n-type inversion layer.
But in n-type materials we normally have fixed donor atoms that have donated an electron and are now +ve ions.
So.. n-type == '+ve dopant ion, plenty of e' inversion == '-ve dopant ion'
What am I interpreting incorrectly?