This is an interesting article. It does mention pulling the base to -1V. Is this the article you were referring to?
Also noteworthy:
"This isn't to exclude MOSFET based designs (some IC vendors have specified MOS as this suits their technology) but in terms of equivalent on-resistan ce and silicon efficiency, the low voltage bipolar device has no equal. For example, the ZETEX ZTX849 E-Line (TO-92 compatible) transistor exhibits a RCE(sat) of 36m?. This can only be matched by a much larger (and ex pensive) MOSFET die, only available in TO-220, D-Pak, and similar larger packages."
Michael