The LND150 model predicts IDSS of about 2.4 mA, whereas the actual parts cluster very tightly around 1.6 mA. Here's the model--what should I adjust to fix it?
.MODEL LND150 NMOS (LEVEL=3 RS=150.00 NSUB=5.0E13
+DELTA=0.1 KAPPA=1.O TPG=1 CGDO=2.1716E-12 +RD=40.0 VTO=-2.0 VMAX=1.0E8 ETA=0.1 +NFS=6.6E10 TOX=1.0E-7 LD=1.698E-9 UO=862.425 +XJ=6.4666E-7 THETA=1.0E-5 CGSO=5.09E-10 L=10.0E-6 +W=600E-6)Thanks
Phil Hobbs